DocumentCode
1943936
Title
Carrier lifetime of low-temperature grown GaAs measured by pump-probe spectroscopy: effect of arsenic pressure during MBE crystal growth
Author
Yano, R. ; Hirayama, Y. ; Miyashita, S. ; Sasabu, H. ; Nakano, H. ; Uesugi, N. ; Uehara, S.
Author_Institution
NTT Basic Res. Labs., Kanagawa, Japan
Volume
1
fYear
2001
fDate
15-19 July 2001
Abstract
Pump-probe spectroscopy showed that low-temperature grown GaAs grown at a higher As pressure has a shorter carrier lifetime than that grown at a low As pressure for both as-grown and anneal conditions.
Keywords
III-V semiconductors; carrier lifetime; gallium arsenide; high-speed optical techniques; molecular beam epitaxial growth; optical pumping; time resolved spectroscopy; GaAs; MBE crystal growth; anneal conditions; arsenic pressure; as-grown conditions; carrier lifetime; higher As pressure; low As pressure; low-temperature grown GaAs; pump-probe spectroscopy; shorter carrier lifetime; Annealing; Charge carrier lifetime; Gallium arsenide; Molecular beam epitaxial growth; Optical pulses; Probes; Pulse measurements; Pump lasers; Spectroscopy; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.967914
Filename
967914
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