Title :
MSM waveguide photodetectors optimized for monolithic integration with HEMTs
Author :
Leary, M.H. ; Ballantyne, J.M.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
The authors describe the design of two MSM waveguide photodetectors which share their layer structure with high electron mobility transistors. This design makes these detectors particularly suited to integration with HEMTs in OEIC´s. Resistive loss at the electrode surface, radiation loss into the substrate, and scattering loss are all accounted for in the optimization for internal detection efficiency of these 50 GHz detectors
Keywords :
high electron mobility transistors; integrated optoelectronics; losses; metal-semiconductor-metal structures; optical waveguides; photodetectors; 50 GHz; HEMTs; MSM waveguide photodetectors; OEIC; high electron mobility transistors; monolithic integration; radiation loss; resistive loss; scattering loss; Detectors; Electrodes; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Monolithic integrated circuits; Optical buffering; Optical waveguides; Photodetectors;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303112
