Title :
Nonselective W/WSix-CVD Technology for Low Resistance via Plugs on Aluminum
Author :
Bertagnolli, E. ; Wieczorek, C. ; Hoffmann, B. ; Schaber, H.
Author_Institution :
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 Mÿnchen 83, F.R.G.
Abstract :
By reducing the thermal budget of a nonselective W/WSix-CVD technology, a via tilling process completely compatible with a conventional aluminum track scheme has been obtained. A specific via resistance in the range of a few 10¿8 ¿cm2 was realized. Hillock formation was suppressed significantly. No fluorine pile-up was found at the WSix-/AlSiTi-interface so the formation of an AlF3-interlayer has been avoided successfully.
Keywords :
Aluminum; Filling; Metallization; Plasma applications; Plasma temperature; Plugs; Polyimides; Sputter etching; Thermal resistance; Tungsten;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
