DocumentCode
1943969
Title
Noise and Diffusion in p-type Silicon
Author
Nougier, J.P. ; Moatadid, A. ; Vaissiere, J.C.
Author_Institution
Centre d´´Electronique de Montpellier, Université des Sciences et Techniques du Languedoc, F-34060 Montpellier Cedex, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
The theory of the fluctuations of the state occupancy function, recently developped, together with the differential relaxation time, allow getting the transverse diffusion coefficient, which is computed in p-type Silicon, as a function of the electric field, at 300 K, from 0 to 50 kV/cm.
Keywords
Boltzmann equation; Circuits; Distribution functions; Fluctuations; Hot carriers; Resumes; Scattering; Silicon; Steady-state;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436881
Link To Document