DocumentCode
1943986
Title
An improved gate breakdown model for studying high efficiency MESFET operation
Author
Winslow, T.A. ; Morris, A.S. ; Trew, R.J.
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fYear
1993
fDate
2-4 Aug 1993
Firstpage
401
Lastpage
410
Abstract
A gate breakdown model for MESFETs is presented. The model is based on quantum tunneling initiated avalanche ionization. The breakdown model is incorporated into a physics based MESFET model. Forward and reverse gate conduction an shown to be the main factors in determining the power and efficiency of MESFET amplifiers
Keywords
Schottky gate field effect transistors; electric breakdown of solids; equivalent circuits; impact ionisation; power transistors; semiconductor device models; tunnelling; forward gate conduction; gate breakdown model; high efficiency MESFET operation; physics based MESFET model; quantum tunneling initiated avalanche ionization; reverse gate conduction; Avalanche breakdown; Breakdown voltage; Electric breakdown; Electron emission; Ionization; MESFETs; Phased arrays; Power amplifiers; Thermionic emission; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location
Ithaca, NY
Print_ISBN
0-7803-0894-8
Type
conf
DOI
10.1109/CORNEL.1993.303114
Filename
303114
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