• DocumentCode
    1943996
  • Title

    Properties of WSi2 : Ohmic Contact to N+ and P+ Si, Barrier between Al and Si, and Feasibility as First Metal in Multilevel Metallization Processes

  • Author

    Zhang, S.-L. ; Hammar, M. ; Johansson, T. ; Buchta, R.

  • Author_Institution
    Swedish institute of microelectronics, PO Box 1084, S-164 21 Kista, Sweden
  • fYear
    1988
  • fDate
    13-16 Sept. 1988
  • Abstract
    The electrical and chemical properties of WSi2 as well as the silicide formation have been examined with respect to applications in VLSI Si-Technology.
  • Keywords
    Chemicals; Conductivity; Metallization; Rough surfaces; Semiconductor films; Silicides; Substrates; Surface roughness; Temperature; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
  • Conference_Location
    Montpellier, France
  • Print_ISBN
    2868830994
  • Type

    conf

  • Filename
    5436882
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1943996