Title :
On the Origin of 1/f Noise in MOS Transistors
Author_Institution :
University of Exeter, School of Engineering, North Park Road, Exeter, BG-Devon EX4 4QF, Great-Britain
Abstract :
It is proposed that 1/f noise is due to ´fast surface states´ which give rise to a redistribution of carriers by diffusion. This leads to the modulation of the carrier density. The square of the modulus of the Fourier transform of the carrier density time function is shown to be inversely proportional to the frequency.
Keywords :
Charge carrier density; Current density; Equations; Fourier transforms; Frequency; Low-frequency noise; MOSFETs; Mathematical analysis; Resumes; Strips;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
