Copper Microstructure Impact on Evolution of Electromigration Induced Voids

Author

Ceric, Hajdin ; De Orio, Roberto Lacerda ; Cervenka, Johann ; Selberherr, Siegfried

Author_Institution

Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria

fYear

2009

fDate

9-11 Sept. 2009

Firstpage

1

Lastpage

4

Abstract

We study the impact of microstructure on nucleation and evolution of electromigration induced voids. The grain boundaries are described with a comprehensive model which includes the dynamics of mobile and immobile vacancies in dependence of mechanical stress. The surface of an evolving void is modeled by a three-dimensional level-set algorithm. Simulations have shown that the constellation of grain boundaries determines the electromigration failure behavior seriously.

Keywords

copper; electromigration; grain boundaries; nucleation; vacancies (crystal); voids (solid); Cu; copper microstructure impact; electromigration failure property; electromigration induced voids; grain boundaries; immobile vacancies; mechanical stress; mobile vacancies; nucleation; three-dimensional level-set algorithm; Circuit simulation; Copper; Electromigration; Equations; Grain boundaries; Integrated circuit interconnections; Microelectronics; Microstructure; Surface morphology; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on

Conference_Location

San Diego, CA

ISSN

1946-1569

Print_ISBN

978-1-4244-3974-8

Electronic_ISBN

1946-1569

Type

conf

DOI

10.1109/SISPAD.2009.5290222

Filename

5290222