Title :
Formation of Ultra Thin Soi-Layer by Implantation of Nitrogen
Author :
Schork, R. ; Ryssel, H.
Author_Institution :
Fraunhofer-Arbeitsgruppe fur Integrierte Schaltungen, Germany
Keywords :
Annealing; Crystallization; Furnaces; Ion implantation; Nitrogen; Production; Semiconductor films; Silicon; Temperature; Thermal stresses;
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.1992.664774
