Title :
Monte Carlo simulation of wide AlGaAs barriers
Author :
Mills, R.J. ; Dunn, G.M. ; Walker, Alison B. ; Daniels, M.E. ; Bishop, P.J. ; Jensen, K.O. ; Ridley, B.K. ; Herbert, D.C. ; Jefferson, J.H.
Author_Institution :
Sch. of Phys., East Anglia Univ., Norwich, UK
Abstract :
An theoretical study has been made of electron transport over a wide AlGaAs barrier with graded interfaces between GaAs contact layers doped at 1×1018 cm-3. Drift diffusion theory has been used giving excellent agreement with experimental current-voltage curves over the temperature range 100-200 K. We also present a fully self consistent 1-D Monte Carlo simulation in which the change in alloy composition in the graded interfaces is accounted for by position dependent scattering. We present a method used in the Monte Carlo simulation which allowed the modelling of the heavily doped contact regions even though the electron density could change by up to 8 orders of magnitude in the device
Keywords :
III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; aluminium compounds; carrier mobility; diffusion in solids; gallium arsenide; semiconductor device models; semiconductor junctions; 100 to 200 K; AlGaAs; AlGaAs barriers; GaAs; GaAs contact layers; MESFET structure; alloy composition; current-voltage curves; drift diffusion theory; electron transport; graded interfaces; heavily doped contact regions; modelling; position dependent scattering; self consistent 1D Monte Carlo simulation; wide barrier; Electrons; Gallium arsenide; Milling machines; Molecular beam epitaxial growth; Particle scattering; Physics; Steady-state; Substrates; Temperature distribution; Voltage;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303119
