Title :
3D MOSFET Device Effects Due to Field Oxide
Author :
Thurner, M. ; Selberherr, S.
Author_Institution :
Institut fÿr Allgemeine Elektrotechnik und Elektronik, Technische Universitÿt wien, Gusshausstrasse 27-29, A-1040 Wien Austria
Abstract :
This paper presents 3D effects of MOSFET´s dute to the nonplanar nature of the field-oxide body. The investigations have been carried out by MINIMOS 5 our fully three-dimenisional simiulatioin program. Three-dimensional effects like threshold shift for small channel devices, channel narrowinig and the enhanced conductivity at the channel edge have been successfully modeled.
Keywords :
Charge carrier processes; Conductivity; Current density; Electric variables; Integrated circuit modeling; MOSFET circuits; Physics; Poisson equations; Very large scale integration; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
