Ion Implanted InP MISFET´s with Low Drain Current Drift

MIS field effect transistors on semi-insulating indium phosphide have been fabricated. The contacts and the channel are doped by silicon implantation. The gate dielectric is SiO2 deposited under UV activation, Depletion-mode devices with a 2-micron channel length have a saturation current drift less than 10 per cent in 24 hours. They are compatible with a laser technology for integrated opto-electronics.