A 1.6-watt high efficiency X-band power MMIC

Author

Avasarala, M. ; Day, D.S. ; Hua, C. ; Chan, S. ; Basset, J.R.

Author_Institution

Avantek Inc., Santa Clara, CA, USA

fYear

1989

fDate

22-25 Oct. 1989

Firstpage

263

Lastpage

266

Abstract

The design and performance of a two-stage molecular-beam-epitaxial (MBE) monolithic power amplifier chip are presented. The MMIC (monolithic microwave integrated circuit) contains full interstage matching, partial matching at the input, and no match at the output. When matched to 50 Omega at input and output using off-chip circuitry, the MMIC demonstrated best overall performance of 32.1 dBm (0.450 W/mm), 33.4%, and 13.2 dB of power, power-added-efficiency (PAE), and associated gain, respectively, across the 8.3-10.7-GHz band. The PAE was as high as 36% in parts of the band. The average performance for 23 devices from 8 wafers from 3 different runs, across the 8.5-10.5-GHz band, was 31.6 dBm (0.430 W/mm), 30%, and 13.1 dB. The chip size is 0.074 in.*0.043 in.*0.003 in. (1.88 mm*1.09 mm).<>

Keywords

MMIC; field effect integrated circuits; microwave amplifiers; power amplifiers; power integrated circuits; 1.6 W; 13.2 dB; 30 to 36 percent; 8.3 to 10.7 GHz; FET; SHF; X-band; full interstage matching; high efficiency; molecular-beam-epitaxial; monolithic microwave integrated circuit; monolithic power amplifier chip; partial input matching; power MMIC; two stage design; Assembly; Circuits; Costs; FETs; Fingers; Impedance matching; MMICs; Phased arrays; Power amplifiers; Size control;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/GAAS.1989.69339

Filename

69339