Title :
InP-based HEMTs for the realization of ultra-high efficiency millimeter wave power amplifiers
Author :
Matloubian, M. ; Larson, L. ; Brown, A. ; Jelloian, L. ; Nguyen, L. ; Lui, M. ; Liu, T. ; Brown, J. ; Thompson, M. ; Lam, W. ; Kurdoghlian, A. ; Rhodes, R. ; Delaney, M. ; Pence, J.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
The authors have conducted a systematic effort to improve the breakdown voltage of InP-based HEMTs without compromising their high frequency performance, and have demonstrated millimeter wave circuit results that are comparable to or exceed those of the best GaAs-based PHEMTs in the critical area of power-added efficiency and output power. This improvement was accomplished by a combination of developments in material growth and device design and fabrication
Keywords :
III-V semiconductors; MMIC; electric breakdown of solids; high electron mobility transistors; indium compounds; microwave amplifiers; power amplifiers; power transistors; solid-state microwave devices; InP; InP-based HEMTs; MM-wave devices; breakdown voltage; device design; fabrication; material growth; millimeter wave power amplifiers; output power; power-added efficiency; ultra-high efficiency; Aircraft; Breakdown voltage; Frequency; HEMTs; High power amplifiers; Indium phosphide; Low-noise amplifiers; MODFETs; PHEMTs; Power amplifiers;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303126
