InP-based HEMTs for the realization of ultra-high efficiency millimeter wave power amplifiers

Author

Matloubian, M. ; Larson, L. ; Brown, A. ; Jelloian, L. ; Nguyen, L. ; Lui, M. ; Liu, T. ; Brown, J. ; Thompson, M. ; Lam, W. ; Kurdoghlian, A. ; Rhodes, R. ; Delaney, M. ; Pence, J.

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

fYear

1993

fDate

2-4 Aug 1993

Firstpage

520

Lastpage

527

Abstract

The authors have conducted a systematic effort to improve the breakdown voltage of InP-based HEMTs without compromising their high frequency performance, and have demonstrated millimeter wave circuit results that are comparable to or exceed those of the best GaAs-based PHEMTs in the critical area of power-added efficiency and output power. This improvement was accomplished by a combination of developments in material growth and device design and fabrication

Keywords

III-V semiconductors; MMIC; electric breakdown of solids; high electron mobility transistors; indium compounds; microwave amplifiers; power amplifiers; power transistors; solid-state microwave devices; InP; InP-based HEMTs; MM-wave devices; breakdown voltage; device design; fabrication; material growth; millimeter wave power amplifiers; output power; power-added efficiency; ultra-high efficiency; Aircraft; Breakdown voltage; Frequency; HEMTs; High power amplifiers; Indium phosphide; Low-noise amplifiers; MODFETs; PHEMTs; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0894-8

Type

conf

DOI

10.1109/CORNEL.1993.303126

Filename

303126