• DocumentCode
    1944314
  • Title

    Predictive Compact Modeling for Strain Effects in Nanoscale Transistors

  • Author

    Xu, Nuo ; Sun, Xin ; Wang, Lynn ; Neureuther, Andrew ; Liu, Tsu-Jae King

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
  • fYear
    2009
  • fDate
    9-11 Sept. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A compact MOSFET I-V model is developed based on quasi-ballistic transport theory, using a more accurate method to calculate the effective stress and its impact on all strain-dependent parameters. This model is verified using published 40 nm-Lg CESL-strained nMOSFET data, and can be used to predict layout-dependent variations and future-generation device performance trends.
  • Keywords
    MOSFET; nanoelectronics; semiconductor device models; stress analysis; MOSFET I-V model; effective stress; layout-dependent variation; nanoscale transistors; predictive compact modeling; quasiballistic transport theory; size 40 nm; strain effects; Backscatter; Capacitive sensors; Compressive stress; Electronic mail; Electrons; MOSFET circuits; Parameter extraction; Predictive models; Sun; Tensile stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
  • Conference_Location
    San Diego, CA
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4244-3974-8
  • Electronic_ISBN
    1946-1569
  • Type

    conf

  • DOI
    10.1109/SISPAD.2009.5290232
  • Filename
    5290232
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1944314