Title :
Half Micrometer N-MOS Technology Using X-Ray Lithography
Author :
Lauer, V. ; Bauer, F. ; Korec, J. ; Huber, H.-L. ; Balk, P.
Author_Institution :
Institute of Semiconductor Electronics, Aachen Technical University, D-5100 Aachen, FRG
Abstract :
MOSFETs with effective channel lengths down to 0.3 ¿=m have been realized using x-ray lithography. To determine process parameters for device optimization two dimensional process and device modeling was employed. In addition, ring oscillators with different numbers of stages were fabricated to evaluate the performance of this technology.
Keywords :
Boron; Circuits; Fabrication; Implants; Inverters; MOS devices; MOSFETs; Ring oscillators; Stability; X-ray lithography;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
