Encapsulated GaAs power MESFET

Author

Nguyen, N.X. ; Ibbetson, J.P. ; Yen, J.C. ; Hashemi, M.H. ; Mishra, U.K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1993

fDate

2-4 Aug 1993

Firstpage

539

Lastpage

547

Abstract

Utilizing a combination of low-temperature-grown Al_0.3Ga_0.7As passivation, overlapping gate, MOCVD regrowth of the source/drain contacts, and isolation by boron ion implantation, we have fabricated a GaAs MESFET with a completely encapsulated channel. Electrical characterization of the device shows that the early catastrophic on-state breakdown is suppressed. In contrast to the usually observed characteristics in GaAs MESFET, the breakdown locus of the device also has a positive slope. These improvements should allow us to bias the device at a higher operating point, thereby increasing the obtainable maximum output power in the device

Keywords

III-V semiconductors; Schottky gate field effect transistors; chemical vapour deposition; electric breakdown of solids; encapsulation; gallium arsenide; ion implantation; passivation; power transistors; B ion implantation; GaAs; GaAs power MESFET; MOCVD regrowth; electrical characterization; encapsulated channel; isolation; low-temperature-grown AlGaAs passivation; on-state breakdown suppression; overlapping gate; Boron; Breakdown voltage; Electric breakdown; Gallium arsenide; Ion implantation; MESFETs; MOCVD; Passivation; Substrates; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Print_ISBN

0-7803-0894-8

Type

conf

DOI

10.1109/CORNEL.1993.303128

Filename

303128