DocumentCode :
1944379
Title :
Equilibrium Solubility of Arsenic and Antimony in Silicon
Author :
Angelucci, R. ; Armigliato, A. ; Landi, E. ; Nobili, D. ; Solmi, S.
Author_Institution :
CNR - Istituto LAMEL, Via Castagnoli 1, 40126 Bologna, Italy
fYear :
1987
fDate :
14-17 Sept. 1987
Firstpage :
461
Lastpage :
464
Abstract :
Equilibrium solid solubility of arsenic and antimony in silicon is derived by Hall and resistivity measurements after suitable annealing. For both elements, the solubility shows a linear trend versus reciprocal temperature.
Keywords :
Charge carrier density; Conductivity measurement; Diffusion processes; Heat recovery; Scattering; Semiconductor films; Silicon; Simulated annealing; Solid modeling; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
Print_ISBN :
0444704779
Type :
conf
Filename :
5436898
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1944379
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