Title :
Design of FinFET SRAM Cells Using a Statistical Compact Model
Author :
Lu, Darsen D. ; Lin, Chung-Hsun ; Yao, Shijing ; Xiong, Weize ; Bauer, Florian ; Cleavelin, Cloves R. ; Niknejad, Ali M. ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
A study of designing FinFET-based SRAM cells using a compact model is reported. Parameters for a multi-gate FET compact model, BSIM-MG are extracted from fabricated n-type and p-type SOI FinFETs. Local mismatch in gate length and fin width is calibrated to electrical measurements of 378 FinFET SRAM cells. The cell design is re-optimized through Monte Carlo statistical simulations. Variation in readability, writability and static leakage of the cell are studied.
Keywords :
MOSFET; Monte Carlo methods; SRAM chips; integrated circuit modelling; silicon-on-insulator; statistical analysis; BSIM-MG; FinFET SRAM cell design; Monte Carlo statistical simulations; SiO2-Si; electrical measurement; multigate FET compact model; n-type SOI FinFETs; p-type FinFETs; readability; static leakage; statistical compact model; writability; Electric variables measurement; Electronic mail; FETs; FinFETs; Instruments; Length measurement; MOSFETs; Monte Carlo methods; Random access memory; Semiconductor process modeling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290234
