Title :
Future Prospects of Widebandgap (WBG) Semiconductor Power Switching Devices
Author_Institution :
LoPel Corp., Naperville, IL, USA
Abstract :
Electrical power switching devices based on widebandgap (WBG) semiconductors have the potential for transformative impact on a wide range of energy conversion applications. Significantly improved electrical and thermal conductivities of WBG semiconductors compared with the semiconductor silicon have the potential for more efficient, compact, and robust power conversion systems. However, to offset inherently higher manufacturing cost of WBG power devices and obtain system-level benefits, power converters need to be operated at higher semiconductor chip junction temperatures and/or at higher switching frequencies. This paper discusses the future prospects of WBG-based power electronics by considering the current state of the art of WBG chip manufacturing, packaging, and thermal management technologies.
Keywords :
electrical conductivity; elemental semiconductors; power convertors; power semiconductor switches; silicon; thermal conductivity; thermal management (packaging); wide band gap semiconductors; Si; WBG semiconductors; WBG-based power electronics; electrical conductivity; electrical power switching devices; energy conversion; power conversion systems; power converters; semiconductor chip junction temperatures; semiconductor power switching device; semiconductor silicon; thermal conductivity; thermal management technology; widebandgap semiconductors; Logic gates; MOSFET; Silicon; Silicon carbide; Stress; Temperature measurement; Threshold voltage; Cost; high-frequency switching; junction temperature; manufacturing; material defects; packaging; thermal management; widebandgap (WBG); widebandgap (WBG).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2360641