DocumentCode
1944424
Title
Improving Reliability using Design Centering
Author
Heimsch, W. ; Krebs, R. ; Ziemann, K. ; Moebus, D.
Author_Institution
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 Mÿnchen 83, F.R.G.
fYear
1988
fDate
13-16 Sept. 1988
Abstract
In this work the reliability of a BiCMOS NOR Gate is investigated. A design centering program is used to dimension the width of the MOS transistors in order to make the circuit utmost insensible to current efficiency fluctuations caused by process parameter deviations. Therewith the reliability could be increased by 37% while the current efficiency of the single MOS transistors fluctuates within its 5% value.
Keywords
BiCMOS integrated circuits; Bipolar transistors; Circuit synthesis; Design optimization; Fabrication; Fluctuations; MOSFETs; Research and development; Switches; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436899
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