Title :
Improving Reliability using Design Centering
Author :
Heimsch, W. ; Krebs, R. ; Ziemann, K. ; Moebus, D.
Author_Institution :
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 Mÿnchen 83, F.R.G.
Abstract :
In this work the reliability of a BiCMOS NOR Gate is investigated. A design centering program is used to dimension the width of the MOS transistors in order to make the circuit utmost insensible to current efficiency fluctuations caused by process parameter deviations. Therewith the reliability could be increased by 37% while the current efficiency of the single MOS transistors fluctuates within its 5% value.
Keywords :
BiCMOS integrated circuits; Bipolar transistors; Circuit synthesis; Design optimization; Fabrication; Fluctuations; MOSFETs; Research and development; Switches; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
