DocumentCode
1944458
Title
Band-Tail Shockley-Read-Hall Recombination in Heavily Doped Silicon
Author
Ghannam, M.Y. ; Mertens, R.P. ; Jain, S.C. ; Nijs, J.F. ; Van Overstraeten, R.
Author_Institution
Electronics and Communications Department, Cairo University, Guiza, Egypt
fYear
1988
fDate
13-16 Sept. 1988
Abstract
Shockley-Read-Hall recombination center density due to the localized states in the minority carrier band tail has been calculated, It is shown that in heavily doped silicon, the effect of these band tail states is comparable to or more important than that due to deep states and modifies the lifetime of minority carriers significantly.
Keywords
Charge carrier processes; Energy states; Equations; Fluctuations; Microelectronics; Photonic band gap; Radiative recombination; Silicon; Spontaneous emission; Tail;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436901
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