Title :
Investigation of the Noise Performance of Double-Gate MOSFETs by Deterministic Simulation of the Boltzmann Equation
Author :
Hong, Sung-Min ; Jungemann, Christoph
Author_Institution :
EIT4, Bundeswehr Univ., Neubiberg, Germany
Abstract :
Noise performance of a double-gate MOSFET is investigated by deterministic simulation of the Boltzmann equation. The fully-coupled scheme of the Boltzmann equation and Poisson equation enables both, rapid convergence of the Newton-Raphson method and noise analysis. In contrast to Monte Carlo noise simulation, it is possible to determine the spatial origin of the terminal current noise. It is confirmed that the larger part of the terminal current noise stems from the source side.
Keywords :
Boltzmann equation; MOSFET; Monte Carlo methods; Newton-Raphson method; Poisson equation; Boltzmann equation; Monte Carlo noise simulation; Newton-Raphson method; Poisson equation; deterministic simulation; double-gate MOSFET; noise analysis; noise performance; terminal current noise; Boltzmann equation; Convergence; Distribution functions; Electric potential; Electrons; MOSFETs; Monte Carlo methods; Newton method; Poisson equations; Scattering parameters;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290240
