DocumentCode
1944550
Title
The Series Resistance of Submicron MOSFETs and its Effect on their Characteristics
Author
Klaassen, F.M. ; Biermans, P.T.J. ; Velghe, R.M.D.
Author_Institution
Philips Research Laboratories, PO Box 80000, NL-5600 JA Eindhoven, The Netherlands
fYear
1988
fDate
13-16 Sept. 1988
Abstract
A process-related design formula for the MOSFET series resistances is discussed, assuming a linear doping profile for graded junctions. The main process variable is the lateral doping gradient, whereas the LDD-dose has little effect. Calculated resistance values agree well with measured data, which have been extracted from the parameters of a new MOSFET circuit model. In the latter model the current and saturation voltage are expressed explicitly in terms of the series resistances.
Keywords
Circuits; Contact resistance; Data mining; Doping profiles; Electrical resistance measurement; Laboratories; MOSFETs; Process design; Proximity effect; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436905
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