Novel Calculations in the Field of Accurate Analytical MOS Transistor Modelling

Extended analytical calculations, starting from basic physical models with only few assumptions made, prove that the drain-source current for a wide range of MOS transistor geometry, can be accurately determined using one single model, without enlarging the number of empirical parameters. Furthermore, it is proven, that some of the assumptions, on which lots of actual models rely, are incorrect, and the related empirical improvements commonly in use lack physical background.