A New Analytical and Statistical-Oriented Approach for the Two-Dimensional Analysis of Short-Channel MOSFET´s

An approximated analytical solution of Poisson´s equation for the short-channel MOSFET operating in the subthreshold regime is presented. It is shown that the proposed approach predicts a dependence of the threshold voltage on process parameters and drain and substrate voltages in very good agreement with two-dimensional analysis and with available experimental data. Finally, the method of this work, which permits to gain a factor of about 103 in CPU time with respect to numerical modeling for threshold predictions, seems particularly suited for statistical modeling.