Title :
Random Fluctuations in Scaled MOS Devices
Author :
Takeuchi, Kiyoshi ; Nishida, Akio ; Hiramoto, Toshiro
Author_Institution :
NEC Electron. Corp., Sagamihara, Japan
Abstract :
Today, variability is recognized as a major obstacle for continuing MOS transistor miniaturization. Among various kinds of variability, this paper mainly focuses on random fluctuation, which is caused by microscopic perturbations, such as discreteness of charges and atomic scale structural irregularity. Some recent research results for quantitatively understanding the causes of random fluctuation are reviewed. Methods of reducing random fluctuation will be discussed.
Keywords :
MOSFET; semiconductor device models; MOS transistor; atomic scale structural irregularity; microscopic perturbations; random fluctuations; scaled MOS devices; FETs; Fluctuations; Integrated circuit measurements; Lithography; MOS devices; MOSFETs; Microscopy; Random access memory; Stress; Threshold voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290243
