DocumentCode :
1944642
Title :
Modeling and Simulation of Orientation-Dependent Fluctuations in Nanowire Field-Effect Biosensors Using the Stochastic Linearized Poisson-Boltzmann Equation
Author :
Heitzinger, Clemens ; Mauser, Norbert J. ; Ringhofer, Christian ; Liu, Yang ; Dutton, Robert W.
Author_Institution :
Dept. of Math., Univ. of Vienna, Vienna, Austria
fYear :
2009
fDate :
9-11 Sept. 2009
Firstpage :
1
Lastpage :
5
Abstract :
We use the stochastic linearized Poisson-Boltzmann equation to model the fluctuations in nanowire field-effect biosensors due to changes in the orientation of the biomolecules. Different orientations of the biomolecules with respect to the sensor surface due to Brownian motion have different probabilities. The probabilities of the orientations are calculated from their electrostatic free energy. The structure considered here is a cross section through a rectangular silicon nanowire lying on a an oxide surface with a back-gate contact. The oxide surface of the nanowire is functionalized by biomolecules in an electrolyte with an electrode. Various combinations of PNA (peptide nucleic acid), single-stranded DNA, and double-stranded DNA are simulated to discuss the various states of a DNA sensor. A charge-transport models yields the current through the transducer that compares well with measurements.
Keywords :
Boltzmann equation; DNA; biochemistry; biosensors; electrolytes; field effect devices; nanosensors; nanowires; stochastic processes; Brownian motion; DNA sensor; biomolecules; double-stranded DNA; electrolyte; electrostatic free energy; nanowire field-effect biosensors; orientation-dependent fluctuation; peptide nucleic acid; probability; single-stranded DNA; stochastic linearized Poisson-Boltzmann equation; Biosensors; DNA; Electrodes; Electrostatics; Fluctuations; Molecular biophysics; Poisson equations; Probability; Silicon; Stochastic processes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
ISSN :
1946-1569
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
Type :
conf
DOI :
10.1109/SISPAD.2009.5290244
Filename :
5290244
Link To Document :
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