DocumentCode
1944690
Title
Using Density-Gradient Theory to Model Sb-Based p-Channel FETs
Author
Ancona, M.G. ; Boos, J.B. ; Bennett, B.R.
Author_Institution
Electron. Sci. & Technol. Div., Naval Res. Lab., Washington, DC, USA
fYear
2009
fDate
9-11 Sept. 2009
Firstpage
1
Lastpage
4
Abstract
Density-gradient theory is discussed as a tool for modeling Sb-based p-channel FETs. The theory´s methods and approximations are reviewed with emphasis given to the phenomenological treatment of the quantum confinement. The theory is then illustrated by using it to analyze FETs having InSb, GaSb and InGaSb channels, and to project their scaling characteristics.
Keywords
III-V semiconductors; antimony compounds; field effect transistors; gallium compounds; indium compounds; semiconductor device models; GaSb; InGaSb; InSb; Sb-based p-channel FET modeling; approximation method; density-gradient theory; quantum confinement; Capacitive sensors; Equations; FETs; III-V semiconductor materials; Laboratories; Microscopy; Particle scattering; Physics; Quantum mechanics; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location
San Diego, CA
ISSN
1946-1569
Print_ISBN
978-1-4244-3974-8
Electronic_ISBN
1946-1569
Type
conf
DOI
10.1109/SISPAD.2009.5290246
Filename
5290246
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