Title :
Using Density-Gradient Theory to Model Sb-Based p-Channel FETs
Author :
Ancona, M.G. ; Boos, J.B. ; Bennett, B.R.
Author_Institution :
Electron. Sci. & Technol. Div., Naval Res. Lab., Washington, DC, USA
Abstract :
Density-gradient theory is discussed as a tool for modeling Sb-based p-channel FETs. The theory´s methods and approximations are reviewed with emphasis given to the phenomenological treatment of the quantum confinement. The theory is then illustrated by using it to analyze FETs having InSb, GaSb and InGaSb channels, and to project their scaling characteristics.
Keywords :
III-V semiconductors; antimony compounds; field effect transistors; gallium compounds; indium compounds; semiconductor device models; GaSb; InGaSb; InSb; Sb-based p-channel FET modeling; approximation method; density-gradient theory; quantum confinement; Capacitive sensors; Equations; FETs; III-V semiconductor materials; Laboratories; Microscopy; Particle scattering; Physics; Quantum mechanics; Stress;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290246
