Monte Carlo-Based Analytical Models for Electron and Hole Electrical Parameters in Strained SiGeC Alloys

Bipolar transistors in advanced BiCMOS technology rely on highly-doped SiGeC bases strained on Si. Modeling the electrical properties of such devices by TCAD means requires an accurate description of SiGeC transport parameters, including low-field mobility, saturation velocity and energy relaxation time. Since bipolar transistor operation involves electron and hole transport, both types of carriers must be adressed. A distinction between majority and minority carriers must also be physically accounted for. In this paper, transport properties of doped and strained Si_1-x-yGe_xC_y alloys are investigated by Full-Band Monte Carlo (MC) method with a view of deriving analytical models suitable for implementation in hydrodynamic-based TCAD simulators.