DocumentCode :
1944958
Title :
Electrical Behaviour and Modelling of a N-Doped a-Si:H Emitter Bipolar Transistor
Author :
Bonnaud, O. ; Gharib, A. El ; Sahnoune, M.
Author_Institution :
Groupe de Microélectronique, Université Rennes I, Campus de BeauIieu, F-35042 Rennes Cedex, France
fYear :
1988
fDate :
13-16 Sept. 1988
Keywords :
Aluminum; Amorphous silicon; Annealing; Bipolar transistors; Chromium; Doping; Heterojunction bipolar transistors; Ion implantation; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
Print_ISBN :
2868830994
Type :
conf
Filename :
5436924
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1944958
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