• DocumentCode
    1944958
  • Title

    Electrical Behaviour and Modelling of a N-Doped a-Si:H Emitter Bipolar Transistor

  • Author

    Bonnaud, O. ; Gharib, A. El ; Sahnoune, M.

  • Author_Institution
    Groupe de Microélectronique, Université Rennes I, Campus de BeauIieu, F-35042 Rennes Cedex, France
  • fYear
    1988
  • fDate
    13-16 Sept. 1988
  • Keywords
    Aluminum; Amorphous silicon; Annealing; Bipolar transistors; Chromium; Doping; Heterojunction bipolar transistors; Ion implantation; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
  • Conference_Location
    Montpellier, France
  • Print_ISBN
    2868830994
  • Type

    conf

  • Filename
    5436924
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1944958