DocumentCode
1944965
Title
A Low Voltage Steep Turn-Off Tunnel Transistor Design
Author
Patel, Pratik ; Jeon, Kanghoon ; Bowonder, Anupama ; Hu, Chenming
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
fYear
2009
fDate
9-11 Sept. 2009
Firstpage
1
Lastpage
4
Abstract
A new tunneling transistor structure is introduced that offers several advantages over prior designs. Notably, tunneling area is substantially increased. Turn on/off swing is improved by engineering doping profile to ensure tunneling initiates in high electric field region. TCAD simulations explore the critical design considerations. The concept of heterojunction tunneling is introduced as a means to achieve low effective band gap and low voltage operation for the design in consideration.
Keywords
low-power electronics; technology CAD (electronics); tunnel transistors; TCAD; heterojunction tunneling; low effective band gap; low voltage operation; tunneling transistor; Computational modeling; Degradation; Doping profiles; Electrons; Energy consumption; Heterojunctions; Low voltage; MOSFETs; Photonic band gap; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location
San Diego, CA
ISSN
1946-1569
Print_ISBN
978-1-4244-3974-8
Electronic_ISBN
1946-1569
Type
conf
DOI
10.1109/SISPAD.2009.5290257
Filename
5290257
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