DocumentCode :
1944977
Title :
In-situ lateral fabrication of zinc and aluminum nanodots by near field optical chemical vapor deposition
Author :
Yamamoto, Y. ; Kawazoe, T. ; Lee, G.H. ; Shimizu, T. ; Kourogi, M. ; Ohtsu, M.
Author_Institution :
Interdisciplinary Graduate Sch. of Sci. & Eng., Tokyo Inst. of Technol., Yokohama, Japan
Volume :
1
fYear :
2001
fDate :
15-19 July 2001
Abstract :
Nanometric Zn and Al dots were deposited on a sapphire substrate with a spacing of 100 nm. Minimum diameter of fabricated Zn and Al dots were 37nm and 25nm, respectively.
Keywords :
aluminium; chemical vapour deposition; electroluminescent devices; integrated optoelectronics; nanotechnology; optical fabrication; zinc; 100 nm; 25 nm; 37 nm; Al; Zn; aluminum nanodots; chemical vapor deposition; fabrication tool; in-situ lateral fabrication; nanoscale electroluminescence devices; near field optical chemical vapor deposition; sapphire substrate; zinc nanodots; Aluminum; Artificial intelligence; Chemical vapor deposition; Optical device fabrication; Optical feedback; Optical films; Probes; Space technology; Substrates; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
Type :
conf
DOI :
10.1109/CLEOPR.2001.967953
Filename :
967953
Link To Document :
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