On the Feasibility of 500 GHz Silicon-Germanium HBTs

Author

Pawlak, A. ; Schroter, Michael ; Krause, J. ; Wedel, G. ; Schroter, Michael ; Jungemann, C.

Author_Institution

CEDIC, Dresden Univ. of Technol., Dresden, Germany

fYear

2009

fDate

9-11 Sept. 2009

Firstpage

1

Lastpage

4

Abstract

A procedure for rapid TCAD based evaluation of device design alternatives is presented. It employs 1D device simulation in combination with a physics-based compact model and a corresponding model generator. This enables to provide libraries with geometry scalable models for mm-wave circuit optimization. Based on an experimentally calibrated baseline the procedure is applied to demonstrate the feasibility of SiGe HBTs with (f_T, f_max) (420,520) GHz at realistic vertical and lateral dimensions. The proposed method is suitable for improving the existing ITRS 2007 SiGe HBT roadmap towards emerging mm-wave applications.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; millimetre wave devices; semiconductor device models; technology CAD (electronics); 1D device simulation; SiGe; frequency 500 GHz; geometry scalable model; mm-wave circuit optimization; physics-based compact model; rapid TCAD procedure; silicon-germanium HBT; Circuit simulation; Circuit synthesis; Doping profiles; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; Semiconductor process modeling; Silicon germanium; Solid modeling; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on

Conference_Location

San Diego, CA

ISSN

1946-1569

Print_ISBN

978-1-4244-3974-8

Electronic_ISBN

1946-1569

Type

conf

DOI

10.1109/SISPAD.2009.5290258

Filename

5290258