Title :
JFET for Completely Depleted High Resistivity Silicon
Author :
Radeka, V. ; Rehak, P. ; Rescia, S. ; Gatti, E. ; Longoni, A. ; Sampietro, M. ; Bertuccio, G. ; Holl, P. ; Struder, L. ; Kemmer, J.
Author_Institution :
Brookhaven Nat. Lab., Upton, NY 11973, U.S.A.
Abstract :
The design and the experimental results of a new class of JFETs, suitable for integration on the high resistivity wafer of a fully depleted radiation detector, are presented. These devices will make possible the integration of a low noise preamplifier directly on the detector, improving the achievable resolution. The new JFET has a measured gm/ID of 1/850 mV-1, a pinch-off of 1.5V and a designed gm/CG of 500 MHz.
Keywords :
Capacitance; Character generation; Conductivity; Energy resolution; FETs; Implants; Integrated circuit measurements; Preamplifiers; Radiation detectors; Silicon;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
