DocumentCode
1945018
Title
JFET for Completely Depleted High Resistivity Silicon
Author
Radeka, V. ; Rehak, P. ; Rescia, S. ; Gatti, E. ; Longoni, A. ; Sampietro, M. ; Bertuccio, G. ; Holl, P. ; Struder, L. ; Kemmer, J.
Author_Institution
Brookhaven Nat. Lab., Upton, NY 11973, U.S.A.
fYear
1988
fDate
13-16 Sept. 1988
Abstract
The design and the experimental results of a new class of JFETs, suitable for integration on the high resistivity wafer of a fully depleted radiation detector, are presented. These devices will make possible the integration of a low noise preamplifier directly on the detector, improving the achievable resolution. The new JFET has a measured gm/ID of 1/850 mV-1, a pinch-off of 1.5V and a designed gm /CG of 500 MHz.
Keywords
Capacitance; Character generation; Conductivity; Energy resolution; FETs; Implants; Integrated circuit measurements; Preamplifiers; Radiation detectors; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436927
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