Title :
Lateral Ge/SiGe/Si Hetero-Channel p-Type MOSFETs
Author :
Chen, Chia-Yu ; Liu, Yang ; Kim, Jongchol ; Dutton, Robert W.
Author_Institution :
Center for Integrated Syst., Stanford Univ., Stanford, CA, USA
Abstract :
To further device scaling, a new hetero-channel MOS device is considered. A novel Ge/SiGe/Si lateral hetero-channel pFET that can significantly reduce band-to-band tunnelling (BTBT) leakage, retain high current drivability, and good electrostatics is introduced in this paper. Through detailed BTBT model in PDE simulators the on-current and off current in pFETs are analyzed. The simulation results show one-order of magnitude reduction (>20) in minimum off current and high drive current. Lateral hetero-channel p-FET provides a promising solution for future highly scaled CMOS technology.
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; germanium; leakage currents; partial differential equations; semiconductor device models; silicon; tunnelling; BTBT model; Ge-SiGe-Si; PDE simulators; band-to-band tunnelling leakage; current drivability; electrostatics; highly scaled CMOS technology; lateral hetero-channel p-type MOSFET; off-current simulator; on-current simulator; pFET device; CMOS technology; Electrostatics; FETs; Germanium silicon alloys; MOS devices; MOSFETs; Permittivity; Photonic band gap; Potential well; Silicon germanium;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290260
