Title :
Optical nonlinearity and response time in beryllium-doped standard temperature MBE grown GaAs/AlAs MQW
Author :
Okuno, T. ; Masumoto, Y. ; Sakuma, Y. ; Hayasaki, Y. ; Kadono, S. ; Okamoto, H.
Author_Institution :
Inst. of Phys., Tsukuba Univ., Ibaraki, Japan
Abstract :
Dynamics of optical absorption saturation in Be-doped standard-temperature MBE grown GaAs/AlAs MQW was studied by using 200fs laser pulses. Response time becomes less than 1ps at doping [Be] > 1 /spl times/ 10/sup 19/ cm/sup -3/, which is in marked contrast to InGaAs/InAlAs MQW.
Keywords :
III-V semiconductors; aluminium compounds; beryllium; gallium arsenide; high-speed optical techniques; molecular beam epitaxial growth; optical saturable absorption; semiconductor doping; semiconductor quantum wells; 200 fs; Be-doped standard temperature MBE grown GaAs/AlAs MQW; GaAs-AlAs:Be; fs laser pulses; optical absorption saturation dynamics; optical nonlinearity; response time; Absorption; Delay; Excitons; Gallium arsenide; Optical pulses; Optical pumping; Optical saturation; Quantum well devices; Semiconductor device doping; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.967957
