Title :
Silicon Molecular Beam Epitaxy : Status ; Devices ; Trends
Author_Institution :
AEG Research Center, D-7900 Ulm, F.R.G.
Abstract :
The single crystal growth, by molecular beam epitaxy, of materials compatible with silicon heterojunction devices are fabricated, strained layer Si/Ge superlattices are investigated, and sillicon based monolithic integration of heterojunction devices and conventional devices is suggested.
Keywords :
Atomic layer deposition; Chemical vapor deposition; Crystalline materials; Epitaxial growth; Heterojunctions; Molecular beam epitaxial growth; Silicon; Substrates; Surface cleaning; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
