Title :
The effect of Mg diffusion on the contact resistance of low doped p-GaN
Author :
Chen, C.C. ; Yen, J.L. ; Yang, Y.J.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Magnesium diffusion was applied to low doped p-GaN (3 /spl times/ 10/sup 16/ cm/sup -3/) using Mg/sub 3/N/sub 2/ as the Mg source. The Mg diffusion resulted in a reduction of resistance of the Ni/Au contact to the p-GaN by /spl sim/1.5 orders of magnitude, by increasing the doping level near the surface to >3 /spl times/ 10/sup 18/cm/sup -3/.
Keywords :
III-V semiconductors; contact resistance; diffusion; gallium compounds; gold; hole density; magnesium; nickel; ohmic contacts; semiconductor doping; semiconductor-metal boundaries; wide band gap semiconductors; GaN:Mg-Ni-Au; Mg diffusion; Mg source; Mg/sub 3/N/sub 2/; Ni-Au; Ni/Au contact; contact resistance; doping level; low doped p-GaN; surface; Annealing; Contact resistance; Current measurement; Gallium nitride; Gold; Semiconductor device doping; Semiconductor materials; Surface resistance; Surface treatment; Transmission line measurements;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.967961
