CMOS Technology using Plasma Nitrided Oxide as a Gate Dielectric

A new technique of plasma nitriding oxide has been developed for very thin gate insulators. The interfacial properties are preserved after plasma nitridation in ammonia at 950°C. Excellent behaviour is observed during aging experiments on transistors using nitrided oxide as the dielectric gate ; the absence of defects due to the plasma as illustrated by the yield achieved for SRAM memories suggests the process compatibility with production.