Title :
Proposal of the novel strain evaluation method for nitride semiconductors by photocurrent spectroscopy
Author :
Kumagai, Motohiro ; Saitoh, Takashi ; Kobayashi, Nao
Author_Institution :
NTT Basic Res. Labs., Kanagawa, Japan
Abstract :
A novel strain evaluation method is proposed, which is based on the strain dependence of the excitonic transition energy. Comparing the excitonic transition energies measured by photocurrent spectroscopy with the calculated energies, c-axis strain in undoped GaN grown on SiC substrate was estimated to be -0.03%.
Keywords :
III-V semiconductors; excitons; gallium compounds; photoconductivity; semiconductor epitaxial layers; wide band gap semiconductors; GaN-SiC; MO-VPE growth; SiC; SiC substrate; c-axis strain; epitaxial layer; excitonic transition energy; nitride semiconductors; photocurrent spectroscopy; strain dependence; strain evaluation method; undoped GaN; Absorption; Capacitive sensors; Energy measurement; Gallium nitride; Photoconductivity; Proposals; Silicon carbide; Spectroscopy; Strain measurement; Substrates;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.967962
