DocumentCode
1945220
Title
Optical properties of ZnO film by plasma-assisted MOCVD
Author
Xinqiang Wang ; Shuren Yang ; Jinzhong Wang ; Jingzhi Yin ; Xiuying Jiang ; Guotong Du
Author_Institution
Dept. of Electron. Sci., Jilin Univ., Changchun, China
Volume
1
fYear
2001
fDate
15-19 July 2001
Abstract
In this article, non-doped and nitrogen doped ZnO films were deposited by plasma-assisted MOCVD on sapphire substrates. The optical properties were investigated by the measurement of photoluminescence, Raman scattering and ultraviolet absorption. It was found that the N-doped ZnO film displayed better crystal quality and optical characteristics, and, furthermore, the resistivity of doped films was much higher than that of undoped samples.
Keywords
II-VI semiconductors; MOCVD; Raman spectra; electrical resistivity; nitrogen; photoluminescence; plasma CVD; semiconductor thin films; wide band gap semiconductors; zinc compounds; Al/sub 2/O/sub 3/; Raman scattering; ZnO; ZnO film; ZnO:N; optical properties; photoluminescence; plasma-assisted MOCVD; resistivity; sapphire; ultraviolet absorption; wide gap semiconductor; MOCVD; Nitrogen; Optical films; Optical scattering; Photoluminescence; Plasma displays; Plasma measurements; Plasma properties; Substrates; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.967963
Filename
967963
Link To Document