DocumentCode
1945238
Title
Process Dependence of Hole Trapping in Nitrided SiO2 Films
Author
Severi, M. ; Impronta, M. ; Dori, L. ; Guerri, S.
Author_Institution
CNR, Istituto LAMEL, Via de´´ Castagnoli n. 1, I-40126 Bologna, Italy
fYear
1988
fDate
13-16 Sept. 1988
Abstract
A systematic investigation of hole trapping in 20-30 nm nitrided oxides as a function of the nitridation conditions were performed using the avalanche injection technique. Nitridation carried out at relatively low temperatures (700-800°C) and for short times brings about an increase of hole traps. Hole trapping reduction can only be achieved for more severe nitridation conditions. The effect of postnitridation annealing in oxygen was also studied.
Keywords
Annealing; Capacitors; Electron traps; Gold; Metallization; Semiconductor films; Silicon carbide; Temperature; Thermal stresses; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436938
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