Title :
Monolithic 50 GHz GaAs FET power amplifier
Author :
Camilleri, N. ; Chye, P. ; Prioriello, R.
Author_Institution :
Avantek Inc., Folsom, CA, USA
Abstract :
Monolithic GaAs FET power amplifiers consisting of several power combined devices have been fabricated and evaluated. The baseline monolithic chip design consists of a single-stage 640- mu m monolithic FET amplifier. This monolithic chip has 6 dB of small signal gain and 23.5 dBm of saturated power at 50 GHz. Several such chips were power combined and cascaded to produce a five-stage amplifier that yields 28 dBm of saturated power with 18 dB of gain from 48 to 52 GHz.<>
Keywords :
III-V semiconductors; MMIC; gallium arsenide; microwave amplifiers; power amplifiers; power integrated circuits; 18 dB; 48 to 52 GHz; 6 dB; EHF; FET power amplifier; GaAs; MM-wave operation; MMIC; five-stage amplifier; microwave IC; millimetre wave type; monolithic chip design; power combined devices; single stage type; Circuit topology; FETs; Feeds; Fingers; Gain; Gallium arsenide; MESFETs; Power amplifiers; Probes; Scattering parameters;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69340
