Title :
Influence of the Fabrication Conditions on the p*-TaSi2/POLY-Si Gate Quality
Author :
Mazure, C. ; Schwalke, U. ; Neppl, F. ; Eichinger, P. ; Metzger, M.
Author_Institution :
Siemens AG, Corporate Research and Development, Microelectronics, D-8000 Mÿnchen 83, F.R.G.
Abstract :
The effect of different polycide fabrication steps on the resulting p+ gate quality is investigated. In particular the boron diffusion is studied in correlation with the oxygen contamination. The role of the quality of the TaSi2/poly-Si interface and of the annealing atmosphere on the boron redistribution are pointed out
Keywords :
Annealing; Atmosphere; Boring; Boron; Contamination; Fabrication; Silicides; Sputtering; Surface cleaning; Tail;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
