Title :
Effect of Deposition Temperature on Plasma Grown Aluminum Oxide Films
Author :
Bourreau, C. ; Catherine, Y.
Author_Institution :
Laboratoire des Plasmas et des Couches Minces, CNRS-UA 838, Institut de Physique et Chimie des Matériaux de Nantes, 2, rue de la Houssiniÿre, F-44072 Nantes Cedex 03, France
Abstract :
The physical and electrical properties of aluminum oxide films deposited from aluminumtrimethyl under plasma conditions have been studied as a function of the silicon substrate temperature. It is shown that an increase of the temperature enhances the oxidation reaction and gives dense films, The C(V) characterization of MOS structures shows a large scattering in the results. However higher temperature (up to 300°C) gives lower flat band voltage, lower hysteresis which indicates a lowering of the free charges in the oxide.
Keywords :
Aluminum oxide; Hysteresis; Oxidation; Plasma density; Plasma properties; Plasma temperature; Scattering; Semiconductor films; Silicon; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
