DocumentCode
1945293
Title
Effect of Deposition Temperature on Plasma Grown Aluminum Oxide Films
Author
Bourreau, C. ; Catherine, Y.
Author_Institution
Laboratoire des Plasmas et des Couches Minces, CNRS-UA 838, Institut de Physique et Chimie des Matériaux de Nantes, 2, rue de la Houssiniÿre, F-44072 Nantes Cedex 03, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
The physical and electrical properties of aluminum oxide films deposited from aluminumtrimethyl under plasma conditions have been studied as a function of the silicon substrate temperature. It is shown that an increase of the temperature enhances the oxidation reaction and gives dense films, The C(V) characterization of MOS structures shows a large scattering in the results. However higher temperature (up to 300°C) gives lower flat band voltage, lower hysteresis which indicates a lowering of the free charges in the oxide.
Keywords
Aluminum oxide; Hysteresis; Oxidation; Plasma density; Plasma properties; Plasma temperature; Scattering; Semiconductor films; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436940
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