DocumentCode :
1945309
Title :
Charge Trapping and Breakdown Mechanism in Simox
Author :
Mayo, Santos ; Suehle, John S. ; Roitman, Peter
Author_Institution :
National Institute of Standards and Technology, Gaithersburg, MD
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
28
Lastpage :
29
Keywords :
Capacitance-voltage characteristics; Capacitors; Current measurement; Degradation; Electric breakdown; Electron traps; Insulation; Integrated circuit technology; NIST; Oxygen;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664779
Filename :
664779
Link To Document :
بازگشت