• DocumentCode
    1945394
  • Title

    A Monte Carlo Study of Diffusion Coefficients of Two-Dimensional Electron Gas in HEMT AlGaAs-GaAs Structures

  • Author

    Zimmermann, J. ; Wu, Y.

  • Author_Institution
    Centre Hyperfréquences et Semiconducteurs, UA CNRS no 287, Bâtiment P3, Université de Lille-Fandres-Artois, 59655 Villeneuve d´´Ascq Cedex, France
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    103
  • Lastpage
    106
  • Abstract
    This paper Presents a Monte Carlo study of diffusion and noise in two-dimensional electron gas (2DEG) in heterojunctions. This is mainly achieved via the calculation of velocity fluctuations correlation functions of the 2DEG subjected to a driving field applied along the channel. It is found that at rather low fields when the carriers have a real two-dimensional motion, the parallel correlation functions show oscillations which we analyse in terms of scattering rates. This gives rise to 2DEG resonant noise spectra whose resonance frequency is very nearly proportional to the driving field strength.
  • Keywords
    Analytical models; Annealing; Electrons; Fabrication; HEMTs; Impurities; Ion implantation; Monte Carlo methods; Power dissipation; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436945