DocumentCode
1945394
Title
A Monte Carlo Study of Diffusion Coefficients of Two-Dimensional Electron Gas in HEMT AlGaAs-GaAs Structures
Author
Zimmermann, J. ; Wu, Y.
Author_Institution
Centre Hyperfréquences et Semiconducteurs, UA CNRS no 287, Bâtiment P3, Université de Lille-Fandres-Artois, 59655 Villeneuve d´´Ascq Cedex, France
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
103
Lastpage
106
Abstract
This paper Presents a Monte Carlo study of diffusion and noise in two-dimensional electron gas (2DEG) in heterojunctions. This is mainly achieved via the calculation of velocity fluctuations correlation functions of the 2DEG subjected to a driving field applied along the channel. It is found that at rather low fields when the carriers have a real two-dimensional motion, the parallel correlation functions show oscillations which we analyse in terms of scattering rates. This gives rise to 2DEG resonant noise spectra whose resonance frequency is very nearly proportional to the driving field strength.
Keywords
Analytical models; Annealing; Electrons; Fabrication; HEMTs; Impurities; Ion implantation; Monte Carlo methods; Power dissipation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436945
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