Defect Characterization of Si*-Implanted GaAs by Monoenergetic Positron Beam Technique

Monoenergetic positrons with variable energies were used to study the depth distribution of implantation-induced vacancy-type defects in undoped GaAs and p-type Si. In B⁺- and As⁺-implanted Si substrates, paraboli-type distributions of vacancy-type defects were observed. In Si⁺-implanted GaAs, the concentration of vacancy-type defect decreased continuously with increasing depth below the surface. The distribution of defects changed into parabolic-type in annealing the Si⁺-implanted GaAs above the temperature of 900°C.