DocumentCode :
1945518
Title :
A Detailed Investigation of the Pseudo-Mos Transistor for in Situ Characterization of Soi Wafers
Author :
Ouisse, T. ; Morfouli, P. ; Faynot, O. ; Seghir, H. ; Margai, J. ; Cristoloveanu, S.
Author_Institution :
LETI (CEA-Technologies Avancees), France
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
30
Lastpage :
31
Keywords :
Channel bank filters; Doping; MOSFET circuits; Probes; Semiconductor device modeling; Semiconductor films; Semiconductor process modeling; Substrates; Threshold voltage; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664780
Filename :
664780
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1945518
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